IRG4PC30SPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4PC30SPBF
Manufacturer	International Rectifier
File Size	242.41 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30SPBF-InternationalRectifier.pdf

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C G E n-channel VCES = 600V VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.

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Published: Feb 4, 2016 |