IRG4PC30FD Datasheet, Transistor, International Rectifier

IRG4PC30FD Features

• Transistor
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribu

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Part number:

IRG4PC30FD

Manufacturer:

International Rectifier

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215.18kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRG4PC30FD Application

• Applications rf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC30FD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430µF D .

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IRG4PC30FD

International Rectifier

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