IRG4PC30KDPBF Datasheet - International Rectifier

IRG4PC30KDPBF INSULATED GATE BIPOALR TRANSISTOR

PD -95557 IRG4PC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10µs, @360V VCE (start), T J = 125°C, www.DataSheet4U.com VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Short Circuit Rated UltraFast IGBT C High short circuit rating optimized for motor control, .

IRG4PC30KDPBF Features

* VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part repla

IRG4PC30KDPBF Datasheet (379.54 KB)