IRG4PC30KDPBF Datasheet (International Rectifier) - INSULATED GATE BIPOALR TRANSISTOR

IRG4PC30KDPBF, INSULATED GATE BIPOALR TRANSISTOR

PD -95557 IRG4PC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10µs, @360V VCE (start), T J = 125°C, www.DataSheet4U.com VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Short Circuit Rated UltraFast IGBT C High short circuit rating optimized for motor control,

IRG4PC30KDPBF Features

* VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part repla