* VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part repla
IRG4PC30KDPBF Datasheet (379.54 KB)
IRG4PC30KDPBF
International Rectifier
379.54 KB
Insulated gate bipoalr transistor.
PD -95557
IRG4PC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
tsc =10µs, @360V VCE (start), T J = 125°C, www.DataSheet.
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