IRH7150 Datasheet - International Rectifier

IRH7150 RADIATION HARDENED POWER MOSFET THRU-HOLE

www.DataSheet4U.com PD - 90677D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204) Product Summary Part Number IRH7150 IRH3150 IRH4150 IRH8150 Radiation Level RDS(on) 100K Rads (Si) 0.065Ω 300K Rads (Si) 0.065Ω 600K Rads (Si) 0.065Ω 1000K Rads (Si) 0.065Ω ID 34A 34A 34A 34A IRH7150 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® TO-204AE International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of pr.

IRH7150 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC

IRH7150 Datasheet (303.18 KB)