IRHE9130 Datasheet (International Rectifier) - (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

IRHE9130, (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

PD - 90881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9130 100K Rads (Si) IRHE93130 300K Rads (Si) RDS(on) 0.30 Ω 0.30 Ω ID -6.5A -6.5A IRHE9130 100V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7389U JANSF2N7389U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven

IRHE9130 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1