IRHE9230 Datasheet (International Rectifier) - (IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

IRHE9230, (IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

PD - 91804D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9230 100K Rads (Si) IRHE93230 300K Rads (Si) RDS(on) 0.80 Ω 0.80 Ω ID -4.0A -4.0A IRHE9230 200V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7390U JANSF2N7390U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven

IRHE9230 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1