IRHF8110 Datasheet - International Rectifier

IRHF8110 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 90671D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number IRHF7110 IRHF3110 IRHF4110 IRHF8110 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) R DS(on) 0.60 Ω 0.60 Ω 0.60 Ω 0.60 Ω IRHF7110 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ® ID 3.5A 3.5A 3.5A 3.5A TO-39 International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven perf.

IRHF8110 Features

* ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC

IRHF8110 Datasheet (612.29 KB)