* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @
IRHF9130 Datasheet (274.65 KB)
IRHF9130
International Rectifier
274.65 KB
P-channel transistor.
www.DataSheet4U.com
PD - 90882F
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level IRHF9130 100K Rads (Si.
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