IRHF9130 P-Channel Power MOSFET

International Rectifier

Description

RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) PD-90882H IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630 RAD Hard™HEXFET ® TE.
IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

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Datasheet Specifications

Part number: IRHF9130
Manufacturer: International Rectifier
File Size: 1.13 MB
Datasheet: IRHF9130_InternationalRectifier.pdf
Description: P-Channel Power MOSFET

Features

* Single Event Effect (SEE) Hardened
* Low RDS(on)
* Low Total Gate Charge
* Proton Tolerant
* Simple Drive Requirements
* Hermetically Sealed
* Ceramic Package
* Light Weight
* ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Pa

Applications

* This technology has long history of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as D

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IRHF9130 P-Channel Power MOSFET International Rectifier

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