IRHF93130 Datasheet - International Rectifier

IRHF93130 P-CHANNEL TRANSISTOR

www.DataSheet4U.com PD - 90882F RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF9130 100K Rads (Si) IRHF93130 300K Rads (Si) RDS(on) 0.30Ω 0.30Ω ID -6.5A -6.5A IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7389 JANSF2N7389 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade o.

IRHF93130 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @

IRHF93130 Datasheet (274.66 KB)