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IRHF93130 P-CHANNEL TRANSISTOR

IRHF93130 Description

www.DataSheet4U.com PD - 90882F RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF9130 100K Rads (Si.

IRHF93130 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @

IRHF93130 Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as

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P-CHANNEL TRANSISTOR International Rectifier
International Rectifier IRHF93130-like datasheet