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IRHF93130 P-CHANNEL TRANSISTOR

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Description

www.DataSheet4U.com PD - 90882F RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF9130 100K Rads (Si.

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Datasheet Specifications

Part number
IRHF93130
Manufacturer
International Rectifier
File Size
274.66 KB
Datasheet
IRHF93130_InternationalRectifier.pdf
Description
P-CHANNEL TRANSISTOR

Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as

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