IRHM8130 Datasheet - International Rectifier

IRHM8130 RADIATION HARDENED POWER MOSFET THRU-HOLE

www.datasheet4u.com PD - 90707D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number Radiation Level IRHM7130 100K Rads (Si) IRHM3130 300K Rads (Si) IRHM4130 600K Rads (Si) IRHM8130 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18 Ω ID 14A 14A 14A 14A IRHM7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ® TO-254AA International Rectifiers RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decad.

IRHM8130 Features

* ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC

IRHM8130 Datasheet (526.32 KB)