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IRHMJ3250 (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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Description

www.DataSheet4U.com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ IRHMJ7250 200V, N-CHANNEL ® TECHNO.

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Datasheet Specifications

Part number
IRHMJ3250
Manufacturer
International Rectifier
File Size
352.20 KB
Datasheet
IRHMJ3250_InternationalRectifier.pdf
Description
(IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC

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