www.DataSheet4U.com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ IRHMJ7250 200V, N-CHANNEL ® TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.10 Ω 0.10 Ω 0.10 Ω 0.10 Ω ID 26A 26A 26A 26A TO-254AA Tabless International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications.
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IRHMJ4250 Features
* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC
IRHMJ3250_InternationalRectifier.pdf
Datasheet Details
IRHMJ4250, IRHMJ3250
International Rectifier
356.26 KB
(irhmjx250) radiation hardened power mosfet surface mount.
This datasheet PDF includes multiple part numbers: IRHMJ4250, IRHMJ3250.
Please refer to the document for exact specifications by model.
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