www.DataSheet4U.com PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless) Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) IRHMJ53160 IRHMJ54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.018Ω 0.018Ω 0.018Ω 0.019Ω ID 35A 35A 35A 35A IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY IRHMJ58160 1000K Rads (Si) TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These d
IRHMJ53160 Features
* n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings
IRHMJ53160_InternationalRectifier.pdf
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IRHMJ53160
International Rectifier
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(irhmj5x160) radiation hardened power mosfet surface mount.
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