IRHMK57160 Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET

IRHMK57160, RADIATION HARDENED POWER MOSFET

PD-97415 RADIATION HARDENED IRHMK57160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMK57160 100K Rads (Si) IRHMK53160 300K Rads (Si) IRHMK54160 500K Rads (Si) IRHMK58160 1000K Rads (Si) RDS(on) 0.013Ω 0.013Ω 0.013Ω 0.013Ω ID 45A 45A 45A 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.

These devices

IRHMK57160 Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°