* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°
IRHMK57160 Datasheet (171.55 KB)
IRHMK57160
International Rectifier
171.55 KB
Radiation hardened power mosfet.
PD-97415
RADIATION HARDENED
IRHMK57160
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
5 TECHNOLOGY
Product Summary Part Num.
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