IRHMK57260SE Datasheet - International Rectifier

IRHMK57260SE RADIATION HARDENED POWER MOSFET

PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMK57260SE 100K Rads (Si) RDS(on) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combin.

IRHMK57260SE Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Dra

IRHMK57260SE-InternationalRectifier.pdf