IRHMK593160 Datasheet - International Rectifier

IRHMK593160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD-96912 RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A -45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful p.

IRHMK593160 Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ V GS = -12V, TC = 25°C ID @ VGS = -1

IRHMK593160_InternationalRectifier.pdf