IRHNA53260 Datasheet - International Rectifier

IRHNA53260, N-CHANNEL POWER MOSFET

www.DataSheet4U.com PD - 91838C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57260 100K Ra.

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IRHNA53260_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRHNA53260

Manufacturer:

International Rectifier

File Size:

255.41 KB

Description:

N-CHANNEL POWER MOSFET

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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IRHNA53260 N-CHANNEL POWER MOSFET International Rectifier

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