IRHNA53Z60 Datasheet - International Rectifier

IRHNA53Z60, RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 91787H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57Z60 100K Ra.

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IRHNA53Z60_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRHNA53Z60

Manufacturer:

International Rectifier

File Size:

272.37 KB

Description:

RADIATION HARDENED POWER MOSFET

Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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IRHNA53Z60 RADIATION HARDENED POWER MOSFET International Rectifier

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