Download the IRHNA57064 datasheet PDF.
This datasheet also covers the IRHNA53064 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.
Note: The manufacturer provides a single datasheet file (IRHNA53064_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHNA57064 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHNA57064. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 91852G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57064 100K Rads (Si) IRHNA53064 300...
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y Part Number Radiation Level IRHNA57064 100K Rads (Si) IRHNA53064 300K Rads (Si) IRHNA54064 600K Rads (Si) IRHNA57064 JANSR2N7468U2 60V, N-CHANNEL REF: MIL-PRF-19500/673 5 TECHNOLOGY RDS(on) ID QPL Part Number 0.0056Ω 75*A JANSR2N7468U2 0.0056Ω 75*A JANSF2N7468U2 0.0056Ω 75*A JANSG2N7468U2 IRHNA58064 1000K Rads (Si) 0.0065Ω 75*A JANSH2N7468U2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
More Datasheets from International Rectifier (now Infineon)
IRHNA57064 Datasheet
