Download the IRHNA57160 datasheet PDF.
This datasheet also covers the IRHNA53160 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.
Note: The manufacturer provides a single datasheet file (IRHNA53160_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHNA57160 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHNA57160. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 91860H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57160 100K Rads (Si) IRHNA53160 IRH...
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y Part Number Radiation Level IRHNA57160 100K Rads (Si) IRHNA53160 IRHNA54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.012Ω 0.012Ω 0.012Ω 0.013Ω IRHNA57160 JANSR2N7469U2 100V, N-CHANNEL REF: MIL-PRF-19500/673 5 TECHNOLOGY ID QPL Part Number 75*A JANSR2N7469U2 75*A JANSF2N7469U2 75*A JANSG2N7469U2 75*A JANSH2N7469U2 IRHNA58160 1000K Rads (Si) SMD-2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
More Datasheets from International Rectifier (now Infineon)
IRHNA57160 Datasheet
