Download the IRHNA57Z60 datasheet PDF.
This datasheet also covers the IRHNA53Z60 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.
Note: The manufacturer provides a single datasheet file (IRHNA53Z60_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHNA57Z60 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHNA57Z60. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 91787H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300...
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y Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) IRHNA54Z60 500K Rads (Si) RDS(on) ID 0.0035Ω 75A* 0.0035Ω 75A* 0.0035Ω 75A* 75A* IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL REF: MIL-PRF-19500/683 5 TECHNOLOGY QPL Part Number JANSR2N7467U2 JANSF2N7467U2 JANSG2N7467U2 JANSH2N7467U2 IRHNA58Z60 1000K Rads (Si) 0.0040Ω SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
More Datasheets from International Rectifier (now Infineon)
IRHNA57Z60 Datasheet
