* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,
IRHNA57260 Datasheet (255.41 KB)
IRHNA57260
International Rectifier
255.41 KB
N-channel power mosfet.
www.DataSheet4U.com
PD - 91838C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA57260 100K Ra.
📁 Related Datasheet
IRHNA57064 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA57160 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA57Z60 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA53064 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA53160 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA53260 N-CHANNEL POWER MOSFET (International Rectifier)
IRHNA53Z60 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA54064 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA54160 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNA54260 N-CHANNEL POWER MOSFET (International Rectifier)
