IRHNA593160 Datasheet - International Rectifier

IRHNA593160 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD-94493A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level Rds(on) IRHNA597160 100K Rads (Si) 0.049Ω IRHNA593160 300K Rads (Si) 0.049Ω ID Q -47A -47A IRHNA597160 100V, P-CHANNEL 5 TECHNOLOGY SMD-2 International Rectifier’s R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/c.

IRHNA593160 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC =100°C IDM PD

IRHNA593160 Datasheet (2.16 MB)