* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD
IRHNJ54130 Datasheet (276.59 KB)
IRHNJ54130
International Rectifier
276.59 KB
Radiation hardened power mosfet.
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PD - 93754E
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level IRHNJ57130 100K .
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