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IRHNJ53130 RADIATION HARDENED POWER MOSFET

IRHNJ53130 Description

www.DataSheet4U.com PD - 93754E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57130 100K .

IRHNJ53130 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD

IRHNJ53130 Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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Datasheet Details

Part number
IRHNJ53130
Manufacturer
International Rectifier
File Size
276.59 KB
Datasheet
IRHNJ53130_InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET

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RADIATION HARDENED POWER MOSFET International Rectifier
International Rectifier IRHNJ53130-like datasheet