Datasheet Specifications
- Part number
- IRHNJ53130
- Manufacturer
- International Rectifier
- File Size
- 276.59 KB
- Datasheet
- IRHNJ53130_InternationalRectifier.pdf
- Description
- RADIATION HARDENED POWER MOSFET
Description
www.DataSheet4U.com PD - 93754E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57130 100K .
Features
* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PDApplications
* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain aIRHNJ53130 Distributors
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