IRHNJ593034 Datasheet - International Rectifier

IRHNJ593034 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 94608 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ597034 100K Rads (Si) IRHNJ593034 300K Rads (Si) RDS(on) 0.06Ω 0.06Ω ID -22A -22A IRHNJ597034 60V, P-CHANNEL 4 # TECHNOLOGY c SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (Me.

IRHNJ593034 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V

IRHNJ593034_InternationalRectifier.pdf