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IRHQ6110 (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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Description

www.DataSheet4U.com PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE M.

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Datasheet Specifications

Part number
IRHQ6110
Manufacturer
International Rectifier
File Size
218.06 KB
Datasheet
IRHQ6110_InternationalRectifier.pdf
Description
(IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as

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