IRHQ6110 Datasheet (International Rectifier) - (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

IRHQ6110, (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω IRHQ6110 100K Rads (Si) 1.1Ω IRHQ63110 300K Rads (Si) 1.1Ω ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for spac

IRHQ6110 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1