IRHQ63110 Datasheet - International Rectifier

IRHQ63110 (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω IRHQ6110 100K Rads (Si) 1.1Ω IRHQ63110 300K Rads (Si) 1.1Ω ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for spac.

IRHQ63110 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1

IRHQ63110 Datasheet (218.06 KB)

IRHQ63110 Datasheet Preview — Preview of IRHQ63110 PDF

Datasheet Details

Part number:

IRHQ63110

Manufacturer:

International Rectifier

File Size:

218.06 KB

Description:

(irhq6110 / irhq63110) radiation hardened power mosfet surface mount.

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IRHQ63110 IRHQ6110 IRHQ63110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT International Rectifier

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