IRHYB597034CM Datasheet - International Rectifier

IRHYB597034CM RADIATION HARDENED POWER MOSFET

PD-97000 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) IRHYB597034CM 60V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHYB597034CM 100K Rads (Si) IRHYB593034CM 300K Rads (Si) RDS(on) 0.087Ω 0.087Ω ID -20A -20A Low-Ohmic TO-257AA (Tab-less) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an L.

IRHYB597034CM Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Dr

IRHYB597034CM-InternationalRectifier.pdf