IRHYB67134CM Datasheet - International Rectifier

IRHYB67134CM RADIATION HARDENED POWER MOSFET

PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω IRHYB63134CM 300K Rads (Si) 0.09Ω ID 19A 19A IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up .

IRHYB67134CM Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Dra

IRHYB67134CM Datasheet (177.31 KB)