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IRL2703S HEXFET Power MOSFET

IRL2703S Description

PD - 9.1360 PRELIMINARY l l l l l l IRL2703S HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Op.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRL2703S Features

* 5 2) 1 .2 2 (.0 4 8) 1 0 .1 6 (.40 0 ) R E F. 4 1 .7 8 (.0 7 0) 1 .2 7 (.0 5 0) 1 2 3 1 5 .4 9 (.61 0 ) 1 4 .7 3 (.58 0 ) 5 .2 8 (.2 0 8) 4 .7 8 (.1 8 8) 1.4 0 (.0 55 ) 1.1 4 (.0 45 ) 2X 5 .0 8 ( .20 0) 2.7 9 ( .1 10 ) 2.2 9 ( .0 90 ) 6.4 7 (.2 55 ) 6.1 8 (.2 43 ) 2.6 1 (.1 0 3) 2.3 2 (.0 9 1) 1.

IRL2703S Applications

* The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection

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HEXFET Power MOSFET International Rectifier
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