IRL7Y1905C Datasheet - International Rectifier

IRL7Y1905C N-CHANNEL POWER MOSFET

PD-94192D HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRL7Y1905C BVDSS IRL7Y1905C 50V, N-CHANNEL 50V RDS(on) 0.11Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely e.

IRL7Y1905C Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Contin

IRL7Y1905C Datasheet (165.94 KB)