IRLI3705N Datasheet - International Rectifier

HEXFET Power MOSFET

IRLI3705N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRLI3705N Datasheet (112.71 KB)

IRLI3705N Datasheet Preview — Preview of IRLI3705N PDF

Datasheet Details

Part number:

IRLI3705N

Manufacturer:

International Rectifier

File Size:

112.71 KB

Description:

Hexfet power mosfet.
l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm .

📁 Related Datasheet

IRLI3705 N-Channel MOSFET (INCHANGE)

IRLI3705N N-Channel MOSFET (INCHANGE)

IRLI3705NPBF Power MOSFET (International Rectifier)

IRLI3705NPBF Power MOSFET (Infineon)

IRLI3103 POWER MOSFET (International Rectifier)

IRLI3215PBF Advanced Process Technology (International Rectifier)

IRLI3303 HEXFET Power MOSFET (International Rectifier)

IRLI3615 HEXFET Power MOSFET (International Rectifier)

IRLI3615PBF POWER MOSFET (International Rectifier)

IRLI3803 HEXFET Power MOSFET (International Rectifier)

TAGS

IRLI3705N HEXFET Power MOSFET International Rectifier

Image Gallery

IRLI3705N General Description

Datasheet Details

File Size:

Description:

IRLI3705N Distributor