IRLIZ34N Datasheet (International Rectifier)

IRLIZ34N, POWER MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des

IRLIZ34N Features

* ackage Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 1 0.60 (.417) 1 0.40 (.409) ø 3.40 (.133) 3.10 (.123) -A 3.70 (.145) 3.20 (.126) 7.10 (.2 80) 6.70 (.2 63) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE AD AS SIGN M EN T S 1 - GA TE 2 - D R AIN 3 - SO U RC E N