IRLIZ34N Datasheet - International Rectifier

POWER MOSFET

IRLIZ34N Features

* ackage Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 1 0.60 (.417) 1 0.40 (.409) ø 3.40 (.133) 3.10 (.123) -A 3.70 (.145) 3.20 (.126) 7.10 (.2 80) 6.70 (.2 63) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE AD AS SIGN M EN T S 1 - GA TE 2 - D R AIN 3 - SO U RC E N

IRLIZ34N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLIZ34N Datasheet (129.64 KB)

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IRLIZ34N

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International Rectifier

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129.64 KB

Description:

Power mosfet.
PD - 9.1329B IRLIZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = .

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IRLIZ34N POWER MOSFET International Rectifier

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IRLIZ34N Features

IRLIZ34N General Description

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