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IRLIZ34N POWER MOSFET

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Description

PD - 9.1329B IRLIZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Features

* ackage Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 1 0.60 (.417) 1 0.40 (.409) ø 3.40 (.133) 3.10 (.123) -A 3.70 (.145) 3.20 (.126) 7.10 (.2 80) 6.70 (.2 63) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE AD AS SIGN M EN T S 1 - GA TE 2 - D R AIN 3 - SO U RC E N

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation www. DataSheet4U. com capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to us

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