IRLIZ34NPBF Datasheet - International Rectifier

HEXFET Power MOSFET

IRLIZ34NPBF General Description

l l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.035Ω G S ID = 22A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized dev.

IRLIZ34NPBF Datasheet (281.17 KB)

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IRLIZ34NPBF

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International Rectifier

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Hexfet power mosfet.
PD - 95455 IRLIZ34NPbF Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Cre.

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IRLIZ34NPBF HEXFET Power MOSFET International Rectifier

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IRLIZ34NPBF General Description

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