IRLML5203 Datasheet - International Rectifier

IRLML5203, HEXFET Power MOSFET

PD - 93967 PROVISIONAL IRLML5203 HEXFET® Power MOSFET RDS(on) max (mΩ) 98@VGS = -10V 165@VGS = -4.5V l l l l l Ultra Low On-Resistance P-Channel MO.
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon are.

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Datasheet Details

Part number:

IRLML5203

Manufacturer:

International Rectifier

File Size:

137.34 KB

Description:

HEXFET Power MOSFET

Features

* S: 233 Kansas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad H

Applications

* A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (

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IRLML5203 HEXFET Power MOSFET International Rectifier

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