IRLML5203GPbF Datasheet - International Rectifier

IRLML5203GPbF Power MOSFET

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced lar.

IRLML5203GPbF Features

* lease refer to IR website at http://www.irf.com/package 8 www.irf.com IRLML5203GPbF Micro3™ Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) TR 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .

IRLML5203GPbF-InternationalRectifier.pdf