IRLMS2002

HEXFET Power MOSFET

International Rectifier

IRLMS2002 General Description

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with.

IRLMS2002 Datasheet (95.26 KB)

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IRLMS2002

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International Rectifier

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95.26 KB

Description:

Hexfet power mosfet.
PD- 93758D IRLMS2002 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated D D .

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IRLMS2002 HEXFET Power MOSFET International Rectifier

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IRLMS2002 General Description

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