IRLMS2002PbF

HEXFET Power MOSFET

International Rectifier

IRLMS2002PbF General Description

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with.

IRLMS2002PbF Datasheet (149.42 KB)

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IRLMS2002PbF

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International Rectifier

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149.42 KB

Description:

Hexfet power mosfet.
PD- 95675 IRLMS2002PbF l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l 2.5V Rated l Lead-Free D D G Descr.

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IRLMS2002PbF HEXFET Power MOSFET International Rectifier

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IRLMS2002PbF General Description

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