IRLS4030-7PPBF Datasheet (International Rectifier) - 100V Single N-Channel HEXFET Power MOSFET

IRLS4030-7PPBF, 100V Single N-Channel HEXFET Power MOSFET

PD -97371 IRLS4030-7PPbF Applications www.datasheet4u.com l DC Motor Drive l l l l HEXFET® Power MOSFET D High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G S VDSS RDS(on) typ.

max.

ID D 100V 3.2mΩ 3.9mΩ 190A Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Ca

IRLS4030-7PPBF Features

* type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase