IRLZ24NL Datasheet - International Rectifier

IRLZ24NL Power MOSFET

l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

IRLZ24NL Features

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* dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD et4U.com DataShee DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward

IRLZ24NL_InternationalRectifier.pdf