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Harris Semiconductor | JANTXV2N6851 | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 200V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF | Quest Components | 111 | 94 units |
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JANTXV2N6851 Datasheet (282.47 KB)
JANTXV2N6851
International Rectifier
282.47 KB
Power mosfet p-channel(bvdss=-200v/ rds(on)=0.80ohm/ id=-4.0a).
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Provisional Data Sheet No. PD-9.551B
JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF:MIL-PRF-19500/564] .
* s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Curren
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Provisional Data Sheet No. PD-9.432B
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Provisional Data Sheet No. PD-9.433B
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Product Summary
Part Number
BVDSS
IRF9130
-100V
RDS(on)
ID -.
JANTXV2N6845 - POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
(International Rectifier)
Previous Datasheet
Index
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Provisional Data Sheet No. PD-9.552B
HEXFET
®
JANTX2N6845 POWER MOSFET JANTXV2N6845 [REF:MIL-PRF-19500/5.
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International Rectifier
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| JANTXV2N6851 |
| NexGen Digital |
| 844 In Stock |
| Qty : 94 units |
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