AUIRF7103Q Power MOSFET

International Rectifier

AUIRF7103Q Description

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Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRF7103Q Features

* l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, RoHS Compliant l Automotive Qualified
* AUTOMOTIVE GRADE AUIRF7103Q HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View

AUIRF7103Q Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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Datasheet Details

Part number: AUIRF7103Q
Manufacturer: International Rectifier
File Size: 402.09 KB
Datasheet: AUIRF7103Q-InternationalRectifier.pdf
Description: Power MOSFET

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Power MOSFET International Rectifier

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