Datasheet Details
- Part number
- IRFB9N60
- Manufacturer
- International Rectifier
- File Size
- 135.44 KB
- Datasheet
- IRFB9N60_InternationalRectifier.pdf
- Description
- Power MOSFET
IRFB9N60 Description
PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive R.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.
IRFB9N60 Features
* (.55 5) 1 3.47 (.53 0)
4 .0 6 (.160 ) 3 .5 5 (.140 )
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M B A M
3X
0.55 (.02 2) 0.46 (.01 8)
0.36 (.0 14 )
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O
IRFB9N60 Applications
* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
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