Datasheet4U Logo Datasheet4U.com

IRFZ34N Power MOSFET

IRFZ34N Description

PD - 94807 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Le.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRFZ34N Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

📥 Download Datasheet

Preview of IRFZ34N PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFZ34 - Power MOSFET (Fairchild Semiconductor)
  • IRFZ34A - Power MOSFET (Fairchild Semiconductor)
  • IRFZ34L - Power MOSFET (Vishay)
  • IRFZ34S - Power MOSFET (Vishay)
  • IRFZ30 - N-Channel Power MOSFET (Samsung Electronics)
  • IRFZ32 - Power Field Effect Transistors (Motorola)
  • IRFZ10 - Power MOSFET (Vishay)
  • IRFZ14 - Power MOSFET (Fairchild Semiconductor)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRFZ34N-like datasheet