Datasheet4U Logo Datasheet4U.com

IRLZ44NPBF POWER MOSFET

IRLZ44NPBF Description

l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRLZ44NPBF Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC

📥 Download Datasheet

Preview of IRLZ44NPBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRLZ44 - N-Channel MOSFET (Samsung semiconductor)
  • IRLZ44A - ADVANCED POWER MOSFET (Samsung semiconductor)
  • IRLZ44Z - N-Channel MOSFET (INCHANGE)
  • IRLZ44ZS - N-Channel MOSFET (INCHANGE)
  • IRLZ40 - N-Channel MOSFET (Samsung semiconductor)
  • IRLZ14 - Power MOSFET (Vishay Siliconix)
  • IRLZ14L - Power MOSFET (Vishay Siliconix)
  • IRLZ14S - Power MOSFET (Vishay)

📌 All Tags

POWER MOSFET International Rectifier
International Rectifier IRLZ44NPBF-like datasheet