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2N7288H

Radiation Hardened N-Channel Power MOSFETs

2N7288H Features

* 9A, 250V, RDS(on) = 0.415Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec

2N7288H General Description

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardne.

2N7288H Datasheet (46.73 KB)

Preview of 2N7288H PDF

Datasheet Details

Part number:

2N7288H

Manufacturer:

Intersil Corporation

File Size:

46.73 KB

Description:

Radiation hardened n-channel power mosfets.
S E M I C O N D U C T O R REGISTRATION PENDING Available as FRS244 (D, R, H) November 1994 2N7288D, 2N7288R 2N7288H Radiation Hardened N-Channel Pow.

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2N7288H Radiation Hardened N-Channel Power MOSFETs Intersil Corporation

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