2N7288H Datasheet (Intersil Corporation) - Radiation Hardened N-Channel Power MOSFETs

2N7288H, Radiation Hardened N-Channel Power MOSFETs

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardne

2N7288H Features

* 9A, 250V, RDS(on) = 0.415Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec