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2N7288H Radiation Hardened N-Channel Power MOSFETs

2N7288H Description

S E M I C O N D U C T O R REGISTRATION PENDING Available as FRS244 (D, R, H) November 1994 2N7288D, 2N7288R 2N7288H Radiation Hardened N-Channel Pow.
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratin.

2N7288H Features

* 9A, 250V, RDS(on) = 0.415Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec

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Datasheet Details

Part number
2N7288H
Manufacturer
Intersil Corporation
File Size
46.73 KB
Datasheet
2N7288H_IntersilCorporation.pdf
Description
Radiation Hardened N-Channel Power MOSFETs

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Radiation Hardened N-Channel Power MOSFETs Intersil Corporation
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