2N721 Datasheet - Motorola

2N721 PNP silicon annular transistor

121 2N (SILICON) PNP silicon annular transistor for high-frequency general-purpose amplifier applications. CASE 22 (TO.18) Collector connected to case MAXIMUM RAilNGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Total Device Dissipation @ TA=25°C (Derate above 25DC) VCEO VCER VCB VEB PD Total Device Dissipation @ TC",25°C P D (Derate above 25°C) TC =100°C Operating & Stbrage Junction Temperature Range TJI Tstg Val.

2N721-Motorola.pdf