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2N7288R Datasheet - Intersil Corporation

2N7288R Radiation Hardened N-Channel Power MOSFETs

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardne.

2N7288R Features

* 9A, 250V, RDS(on) = 0.415Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec

2N7288R Datasheet (46.73 KB)

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Datasheet Details

Part number:

2N7288R

Manufacturer:

Intersil Corporation

File Size:

46.73 KB

Description:

Radiation hardened n-channel power mosfets.

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2N7288R Radiation Hardened N-Channel Power MOSFETs Intersil Corporation

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