Part number:
2N7400
Manufacturer:
Intersil Corporation
File Size:
78.73 KB
Description:
N-channel power mosfet.
* 8A, 200V, rDS(ON) = 0.440Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rat
2N7400
Intersil Corporation
78.73 KB
N-channel power mosfet.
📁 Related Datasheet
2N740 - NPN silicon annular transistors
(Motorola)
2N735 (SILICON) 2N736 2N739 2N740
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE.
2N741 - PNP germanium mesa transistors
(Motorola)
41, A 2N7
(GERMANIUM)
CASE 22
(TO-IS)
Collactor connectad to elsa
PNP germanium mesa transistors for oscillator, frequency multiplier and amplifier.
2N741A - PNP germanium mesa transistors
(Motorola)
41, A 2N7
(GERMANIUM)
CASE 22
(TO-IS)
Collactor connectad to elsa
PNP germanium mesa transistors for oscillator, frequency multiplier and amplifier.
2N7424 - P-Channel Transistor
(ETC)
The documentation and process conversion measures necessary to ply with this document shall be pleted by 6 February 2014.
INCH-POUND
MIL-PRF-19.
2N7425 - P-Channel Transistor
(ETC)
The documentation and process conversion measures necessary to ply with this document shall be pleted by 6 February 2014.
INCH-POUND
MIL-PRF-19.
2N7426 - P-Channel Transistor
(ETC)
The documentation and process conversion measures necessary to ply with this document shall be pleted by 6 February 2014.
INCH-POUND
MIL-PRF-19.
2N743 - NPN silicon annular transistor
(Motorola)
2N743 (SILICON)
NPN silicon annular transistor designed for highspeed, low-current, saturated switching operations.
CASE 22
(TO-IS) Collector connec.
2N744 - NPN silicon annular transistor
(Motorola)
2N744 (SILICON)
CASE 22
(TO-18)
Collector connected to case
NPN silicon annular transistor for high-speed switching applications.
MAXIMUM RATINGS R.
